NCE0157AK MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE0157AK

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 170 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 57 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 55 nS

Cossⓘ - Capacitancia de salida: 210 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm

Encapsulados: TO252

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NCE0157AK datasheet

 ..1. Size:436K  ncepower
 nce0157ak.pdf pdf_icon

NCE0157AK

Pb Free Product http //www.ncepower.com NCE0157AK NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0157AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =57A RDS(ON)

 6.1. Size:631K  ncepower
 nce0157a2d.pdf pdf_icon

NCE0157AK

Pb Free Product http //www.ncepower.com NCE0157A2D NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0157A2D uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V = 100V,I =57A DS D R

 6.2. Size:655K  ncepower
 nce0157a.pdf pdf_icon

NCE0157AK

Pb Free Product http //www.ncepower.com NCE0157A2 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0157A2 uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V = 100V,I =57A DS D R

 6.3. Size:335K  ncepower
 nce0157a2.pdf pdf_icon

NCE0157AK

Pb Free Product http //www.ncepower.com NCE0157A2 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0157A2 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =57A RDS(ON)

MOSTRAR MÁS

Otros transistores... NCE0117AK, NCE011N30GU, NCE0130GA, NCE0140AK2, NCE0140I2, NCE0140IA, NCE0157A, NCE0157A2D, IRF640N, NCE0157G, NCE0159, NCE0160AG, NCE0160G, NCE01H13D, NCE01NP03S, NCE01P05S, NCE01P13