All MOSFET. NCE0157AK Datasheet

 

NCE0157AK MOSFET. Datasheet pdf. Equivalent


   Type Designator: NCE0157AK
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 170 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.8 V
   |Id|ⓘ - Maximum Drain Current: 57 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 111 nC
   trⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 210 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: TO252

 NCE0157AK Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCE0157AK Datasheet (PDF)

 ..1. Size:436K  ncepower
 nce0157ak.pdf

NCE0157AK NCE0157AK

Pb Free Producthttp://www.ncepower.com NCE0157AKNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0157AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =57A RDS(ON)

 6.1. Size:631K  ncepower
 nce0157a2d.pdf

NCE0157AK NCE0157AK

Pb Free Producthttp://www.ncepower.comNCE0157A2DNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE0157A2D uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V = 100V,I =57ADS DR

 6.2. Size:655K  ncepower
 nce0157a.pdf

NCE0157AK NCE0157AK

Pb Free Producthttp://www.ncepower.comNCE0157A2NCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE0157A2 uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V = 100V,I =57ADS DR

 6.3. Size:335K  ncepower
 nce0157a2.pdf

NCE0157AK NCE0157AK

Pb Free Producthttp://www.ncepower.com NCE0157A2NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0157A2 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =57A RDS(ON)

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: SP8601

 

 
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