NCE01H13D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE01H13D

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 285 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 130 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 24 nS

Cossⓘ - Capacitancia de salida: 414.6 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0068 Ohm

Encapsulados: TO263

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NCE01H13D datasheet

 ..1. Size:458K  ncepower
 nce01h13d.pdf pdf_icon

NCE01H13D

NCE01H13D http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H13D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =130A RDS(ON)

 6.1. Size:358K  ncepower
 nce01h13.pdf pdf_icon

NCE01H13D

Pb Free Product NCE01H13 http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H13 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =130A RDS(ON)

 7.1. Size:416K  ncepower
 nce01h11.pdf pdf_icon

NCE01H13D

Pb Free Product http //www.ncepower.com NCE01H11 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H11 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =110A RDS(ON)

 7.2. Size:377K  ncepower
 nce01h10.pdf pdf_icon

NCE01H13D

Pb Free Product http //www.ncepower.com NCE01H10 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =100A RDS(ON)

MOSTRAR MÁS

Otros transistores... NCE0140IA, NCE0157A, NCE0157A2D, NCE0157AK, NCE0157G, NCE0159, NCE0160AG, NCE0160G, 10N60, NCE01NP03S, NCE01P05S, NCE01P13, NCE01P13I, NCE01P18, NCE01P18L, NCE01P30D, NCE01P30I