NCE01H13D Todos los transistores

 

NCE01H13D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE01H13D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 285 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 130 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 24 nS
   Cossⓘ - Capacitancia de salida: 414.6 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0068 Ohm
   Paquete / Cubierta: TO263
 

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NCE01H13D Datasheet (PDF)

 ..1. Size:458K  ncepower
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NCE01H13D

NCE01H13Dhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H13D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =130A RDS(ON)

 6.1. Size:358K  ncepower
 nce01h13.pdf pdf_icon

NCE01H13D

Pb Free ProductNCE01H13http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H13 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =130A RDS(ON)

 7.1. Size:416K  ncepower
 nce01h11.pdf pdf_icon

NCE01H13D

Pb Free Producthttp://www.ncepower.com NCE01H11NCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H11 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =110A RDS(ON)

 7.2. Size:377K  ncepower
 nce01h10.pdf pdf_icon

NCE01H13D

Pb Free Producthttp://www.ncepower.com NCE01H10NCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =100A RDS(ON)

MOSTRAR MÁS

Otros transistores... NCE0140IA , NCE0157A , NCE0157A2D , NCE0157AK , NCE0157G , NCE0159 , NCE0160AG , NCE0160G , IRFB4227 , NCE01NP03S , NCE01P05S , NCE01P13 , NCE01P13I , NCE01P18 , NCE01P18L , NCE01P30D , NCE01P30I .

History: HGP046NE6AL | CEP730G | RJK1562DJE | EV3400 | SI1032X

 

 
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