NCE01H13D - аналоги и даташиты транзистора

 

NCE01H13D - Даташиты. Аналоги. Основные параметры


   Наименование производителя: NCE01H13D
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 285 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 130 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 24 ns
   Cossⓘ - Выходная емкость: 414.6 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0068 Ohm
   Тип корпуса: TO263
 

 Аналог (замена) для NCE01H13D

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCE01H13D Datasheet (PDF)

 ..1. Size:458K  ncepower
 nce01h13d.pdf pdf_icon

NCE01H13D

NCE01H13Dhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H13D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =130A RDS(ON)

 6.1. Size:358K  ncepower
 nce01h13.pdf pdf_icon

NCE01H13D

Pb Free ProductNCE01H13http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H13 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =130A RDS(ON)

 7.1. Size:416K  ncepower
 nce01h11.pdf pdf_icon

NCE01H13D

Pb Free Producthttp://www.ncepower.com NCE01H11NCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H11 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =110A RDS(ON)

 7.2. Size:377K  ncepower
 nce01h10.pdf pdf_icon

NCE01H13D

Pb Free Producthttp://www.ncepower.com NCE01H10NCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =100A RDS(ON)

ПОКАЗАТЬ ЕЩЁ

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History: VBB1630 | ZXMP6A18KTC | WMB03DN06T1 | AON6413 | IXFN22N120 | MCG04N10A | NCEP020N30GU

 

 
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