NCE01H13D Datasheet and Replacement
Type Designator: NCE01H13D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 285 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 130 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 414.6 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0068 Ohm
Package: TO263
NCE01H13D substitution
NCE01H13D Datasheet (PDF)
nce01h13d.pdf

NCE01H13Dhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H13D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =130A RDS(ON)
nce01h13.pdf

Pb Free ProductNCE01H13http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H13 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =130A RDS(ON)
nce01h11.pdf

Pb Free Producthttp://www.ncepower.com NCE01H11NCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H11 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =110A RDS(ON)
nce01h10.pdf

Pb Free Producthttp://www.ncepower.com NCE01H10NCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =100A RDS(ON)
Datasheet: NCE0140IA , NCE0157A , NCE0157A2D , NCE0157AK , NCE0157G , NCE0159 , NCE0160AG , NCE0160G , IRFB4227 , NCE01NP03S , NCE01P05S , NCE01P13 , NCE01P13I , NCE01P18 , NCE01P18L , NCE01P30D , NCE01P30I .
History: RJK1008DPP-E0 | RQJ0305EQDQA | CSD19536KCS | KRLML6401 | P057AAT | AON6266 | DH028N03E
Keywords - NCE01H13D MOSFET datasheet
NCE01H13D cross reference
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NCE01H13D replacement
History: RJK1008DPP-E0 | RQJ0305EQDQA | CSD19536KCS | KRLML6401 | P057AAT | AON6266 | DH028N03E



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