NCE01P30D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE01P30D

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 120 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 30 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 80 nS

Cossⓘ - Capacitancia de salida: 184.5 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.065 Ohm

Encapsulados: TO263

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NCE01P30D datasheet

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NCE01P30D

http //www.ncepower.com NCE01P30D NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P30D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-30A RDS(ON)

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NCE01P30D

http //www.ncepower.com NCE01P30K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P30K uses advanced trench technology and design to provide excellent R with low gate charge. It can DS(ON) be used in a wide variety of applications. It is ESD protested. General Features V =-100V,I =-30A Schematic diagram DS D R

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NCE01P30D

http //www.ncepower.com NCE01P30I NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P30I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-30A Schematic diagram RDS(ON)

 6.3. Size:341K  ncepower
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NCE01P30D

MOSTRAR MÁS

Otros transistores... NCE0160G, NCE01H13D, NCE01NP03S, NCE01P05S, NCE01P13, NCE01P13I, NCE01P18, NCE01P18L, IRFP250N, NCE01P30I, NCE01P30K, NCE01P30L, NCE01P35K, NCE0203S, NCE0205IA, NCE0208IA, NCE0224A