NCE01P30D MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NCE01P30D
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 120 W
Предельно допустимое напряжение сток-исток |Uds|: 100 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.5 V
Максимально допустимый постоянный ток стока |Id|: 30 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 120 nC
Время нарастания (tr): 80 ns
Выходная емкость (Cd): 184.5 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.065 Ohm
Тип корпуса: TO263
NCE01P30D Datasheet (PDF)
nce01p30d.pdf
http://www.ncepower.com NCE01P30DNCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P30D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-30A RDS(ON)
nce01p30k.pdf
http://www.ncepower.comNCE01P30KNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE01P30K uses advanced trench technology anddesign to provide excellent R with low gate charge. It canDS(ON)be used in a wide variety of applications. It is ESD protested.General Features V =-100V,I =-30A Schematic diagramDS DR
nce01p30i.pdf
http://www.ncepower.com NCE01P30INCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P30I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-30A Schematic diagram RDS(ON)
nce01p30.pdf
Pb Free Producthttp://www.ncepower.com NCE01P30NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P30 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-30A Schematic diagram RDS(ON)
nce01p30l.pdf
http://www.ncepower.com NCE01P30LNCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P30L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-30A Schematic diagram RDS(ON)
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