NCE01P30D
MOSFET. Datasheet pdf. Equivalent
Type Designator: NCE01P30D
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 120
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 30
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 120
nC
trⓘ - Rise Time: 80
nS
Cossⓘ -
Output Capacitance: 184.5
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.065
Ohm
Package:
TO263
NCE01P30D
Datasheet (PDF)
..1. Size:325K ncepower
nce01p30d.pdf 
http://www.ncepower.com NCE01P30DNCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P30D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-30A RDS(ON)
6.1. Size:670K ncepower
nce01p30k.pdf
http://www.ncepower.comNCE01P30KNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE01P30K uses advanced trench technology anddesign to provide excellent R with low gate charge. It canDS(ON)be used in a wide variety of applications. It is ESD protested.General Features V =-100V,I =-30A Schematic diagramDS DR
6.2. Size:316K ncepower
nce01p30i.pdf
http://www.ncepower.com NCE01P30INCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P30I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-30A Schematic diagram RDS(ON)
6.3. Size:341K ncepower
nce01p30.pdf
Pb Free Producthttp://www.ncepower.com NCE01P30NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P30 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-30A Schematic diagram RDS(ON)
6.4. Size:297K ncepower
nce01p30l.pdf
http://www.ncepower.com NCE01P30LNCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P30L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-30A Schematic diagram RDS(ON)
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