NCE035P40GU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE035P40GU
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 120 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 130 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 25 nS
Cossⓘ - Capacitancia de salida: 705 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm
Paquete / Cubierta: DFN5X6
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NCE035P40GU Datasheet (PDF)
nce035p40gu.pdf

http://www.ncepower.comNCE035P40GUNCE P-Channel Enhancement Mode Power MOSFETDescription General FeaturesThe NCE035P40GU uses advanced trench technology and V =-40V,I =-130ADS Ddesign to provide excellent R with low gate charge. It R
nce035n30k.pdf

NCE035N30Khttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE035N30K uses advanced trench technology andGeneral Featuresdesign to provide excellent R with low gate charge. It can V =30V,I =105ADS(ON) DS Dbe used in a wide variety of applications. R =3.0 m (typical) @ V =10VDS(ON) GSR =5.2 m (typical) @ V =4.5VApplication DS(ON) GS
nce035n30g.pdf

NCE035N30Ghttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE025N30G uses advanced trench technology andGeneral Featuresdesign to provide excellent R with low gate charge. It can V =30V,I =100ADS(ON) DS Dbe used in a wide variety of applications. R =3.0m (typical) @ V =10VDS(ON) GSR =5.2m (typical) @ V =4.5VApplication DS(ON) GS
Otros transistores... NCE0224F , NCE0250D , NCE0260P , NCE0260T , NCE0270T , NCE0275 , NCE0275D , NCE02P20K , 4435 , NCE1012E , NCE1013E , NCE1102N , NCE1205 , NCE1490 , NCE14P40K , NCE1504R , NCE1505S .
History: IPD031N03L
History: IPD031N03L



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