All MOSFET. NCE035P40GU Datasheet

 

NCE035P40GU Datasheet and Replacement


   Type Designator: NCE035P40GU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 130 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 705 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: DFN5X6
 

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NCE035P40GU Datasheet (PDF)

 ..1. Size:639K  ncepower
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NCE035P40GU

http://www.ncepower.comNCE035P40GUNCE P-Channel Enhancement Mode Power MOSFETDescription General FeaturesThe NCE035P40GU uses advanced trench technology and V =-40V,I =-130ADS Ddesign to provide excellent R with low gate charge. It R

 8.1. Size:754K  ncepower
nce035n30k.pdf pdf_icon

NCE035P40GU

NCE035N30Khttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE035N30K uses advanced trench technology andGeneral Featuresdesign to provide excellent R with low gate charge. It can V =30V,I =105ADS(ON) DS Dbe used in a wide variety of applications. R =3.0 m (typical) @ V =10VDS(ON) GSR =5.2 m (typical) @ V =4.5VApplication DS(ON) GS

 8.2. Size:751K  ncepower
nce035n30g.pdf pdf_icon

NCE035P40GU

NCE035N30Ghttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE025N30G uses advanced trench technology andGeneral Featuresdesign to provide excellent R with low gate charge. It can V =30V,I =100ADS(ON) DS Dbe used in a wide variety of applications. R =3.0m (typical) @ V =10VDS(ON) GSR =5.2m (typical) @ V =4.5VApplication DS(ON) GS

Datasheet: NCE0224F , NCE0250D , NCE0260P , NCE0260T , NCE0270T , NCE0275 , NCE0275D , NCE02P20K , 4435 , NCE1012E , NCE1013E , NCE1102N , NCE1205 , NCE1490 , NCE14P40K , NCE1504R , NCE1505S .

History: CPH5852 | STD3LN62K3

Keywords - NCE035P40GU MOSFET datasheet

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