NCE035P40GU Datasheet and Replacement
Type Designator: NCE035P40GU
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 130 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 705 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: DFN5X6
NCE035P40GU substitution
NCE035P40GU Datasheet (PDF)
nce035p40gu.pdf

http://www.ncepower.comNCE035P40GUNCE P-Channel Enhancement Mode Power MOSFETDescription General FeaturesThe NCE035P40GU uses advanced trench technology and V =-40V,I =-130ADS Ddesign to provide excellent R with low gate charge. It R
nce035n30k.pdf

NCE035N30Khttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE035N30K uses advanced trench technology andGeneral Featuresdesign to provide excellent R with low gate charge. It can V =30V,I =105ADS(ON) DS Dbe used in a wide variety of applications. R =3.0 m (typical) @ V =10VDS(ON) GSR =5.2 m (typical) @ V =4.5VApplication DS(ON) GS
nce035n30g.pdf

NCE035N30Ghttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE025N30G uses advanced trench technology andGeneral Featuresdesign to provide excellent R with low gate charge. It can V =30V,I =100ADS(ON) DS Dbe used in a wide variety of applications. R =3.0m (typical) @ V =10VDS(ON) GSR =5.2m (typical) @ V =4.5VApplication DS(ON) GS
Datasheet: NCE0224F , NCE0250D , NCE0260P , NCE0260T , NCE0270T , NCE0275 , NCE0275D , NCE02P20K , 4435 , NCE1012E , NCE1013E , NCE1102N , NCE1205 , NCE1490 , NCE14P40K , NCE1504R , NCE1505S .
History: HRLD1B8N10K | STP55NF06FP | CEF02N6G | SM1F15NSV | FQB14N15 | AMA461P | FQB17N08LTM
Keywords - NCE035P40GU MOSFET datasheet
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History: HRLD1B8N10K | STP55NF06FP | CEF02N6G | SM1F15NSV | FQB14N15 | AMA461P | FQB17N08LTM



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