NCE1805S Todos los transistores

 

NCE1805S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE1805S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 185 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 19 nS
   Cossⓘ - Capacitancia de salida: 120 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm
   Paquete / Cubierta: SOP8
 

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NCE1805S Datasheet (PDF)

 ..1. Size:331K  ncepower
 nce1805s.pdf pdf_icon

NCE1805S

Pb Free Producthttp://www.ncepower.com NCE1805SNCE N-Channel Enhancement Mode Power MOSFET Description The NCE1805S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDS =185V,ID =5A RDS(ON)

 9.1. Size:384K  ncepower
 nce1810ak.pdf pdf_icon

NCE1805S

Pb Free Producthttp://www.ncepower.com NCE1810AKNCE N-Channel Enhancement Mode Power MOSFET Description The NCE1810AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =180V,ID =10A Schematic diagram RDS(ON)

 9.2. Size:388K  ncepower
 nce1826k.pdf pdf_icon

NCE1805S

Pb Free Producthttp://www.ncepower.com NCE1826KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE1826K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =185V,ID =26A RDS(ON)

 9.3. Size:295K  ncepower
 nce18nd11u.pdf pdf_icon

NCE1805S

NCE18ND11Uhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE18ND11U uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =18V,ID =11A RDS(ON)

MOSTRAR MÁS

Otros transistores... NCE15P25J , NCE15P25JI , NCE15P25JK , NCE15P30 , NCE15P30K , NCE1608N , NCE16P07J , NCE16P40Q , MMIS60R580P , NCE1810AK , NCE1826K , NCE2004Y , NCE2006Y , NCE2012 , NCE2013J , NCE2014ES , NCE2025I .

History: FDMB3800N | SI5402BDC | IRFR3303

 

 
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