All MOSFET. NCE1805S Datasheet

 

NCE1805S Datasheet and Replacement


   Type Designator: NCE1805S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 185 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SOP8
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NCE1805S Datasheet (PDF)

 ..1. Size:331K  ncepower
nce1805s.pdf pdf_icon

NCE1805S

Pb Free Producthttp://www.ncepower.com NCE1805SNCE N-Channel Enhancement Mode Power MOSFET Description The NCE1805S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDS =185V,ID =5A RDS(ON)

 9.1. Size:384K  ncepower
nce1810ak.pdf pdf_icon

NCE1805S

Pb Free Producthttp://www.ncepower.com NCE1810AKNCE N-Channel Enhancement Mode Power MOSFET Description The NCE1810AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =180V,ID =10A Schematic diagram RDS(ON)

 9.2. Size:388K  ncepower
nce1826k.pdf pdf_icon

NCE1805S

Pb Free Producthttp://www.ncepower.com NCE1826KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE1826K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =185V,ID =26A RDS(ON)

 9.3. Size:295K  ncepower
nce18nd11u.pdf pdf_icon

NCE1805S

NCE18ND11Uhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE18ND11U uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =18V,ID =11A RDS(ON)

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