NCE20NP1006S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NCE20NP1006S
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 2 W
   Voltaje máximo drenador - fuente |Vds|: 20 V
   Voltaje máximo fuente - puerta |Vgs|: 12 V
   Corriente continua de drenaje |Id|: 6 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 1 V
   Carga de la puerta (Qg): 10.2 nC
   Tiempo de subida (tr): 13 nS
   Conductancia de drenaje-sustrato (Cd): 128 pF
   Resistencia entre drenaje y fuente RDS(on): 0.014 Ohm
   Paquete / Cubierta: SOP8

Búsqueda de reemplazo de MOSFET NCE20NP1006S

NCE20NP1006S Datasheet (PDF)

..1. Size:412K ncepower
nce20np1006s.pdf

http://www.ncepower.com NCE20NP1006SN and P-Channel Enhancement Mode Power MOSFET Description The NCE20NP1006S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-Channel N-channel P-channelVDS = 20V,ID

8.1. Size:650K ncepower
nce20nd15q.pdf

NCE20ND15Qhttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE20ND15Q uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.It is ESDprotected.General Features V =20V,I =15ADS DR = 3.6m @ V =4.5VDS(ON) GSSchematic diagramR = 3.7m @ V =4VDS

8.2. Size:754K ncepower
nce20nd07u.pdf

http://www.ncepower.comNCE20ND07UNCE N-Channel Enhancement Mode Power MOSFETGeneral FeaturesDescription V = 20V,I =7ADS DThe NCE20ND07U uses advanced trench technology and designR

8.3. Size:322K ncepower
nce20nd06.pdf

Pb Free Producthttp://www.ncepower.com NCE20ND06NCE N-Channel Enhancement Mode Power MOSFET Description The NCE20ND06 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram General Features V

8.4. Size:640K ncepower
nce20nd08u.pdf

NCE20ND08Uhttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE20ND08U uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =20V,I =12ADS DR

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Liste

Recientemente añadidas las descripciónes de los transistores: