All MOSFET. NCE20NP1006S Datasheet

 

NCE20NP1006S MOSFET. Datasheet pdf. Equivalent


   Type Designator: NCE20NP1006S
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10.2 nC
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 128 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: SOP8

 NCE20NP1006S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCE20NP1006S Datasheet (PDF)

 ..1. Size:412K  ncepower
 nce20np1006s.pdf

NCE20NP1006S NCE20NP1006S

http://www.ncepower.com NCE20NP1006SN and P-Channel Enhancement Mode Power MOSFET Description The NCE20NP1006S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-Channel N-channel P-channelVDS = 20V,ID

 8.1. Size:650K  ncepower
 nce20nd15q.pdf

NCE20NP1006S NCE20NP1006S

NCE20ND15Qhttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE20ND15Q uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.It is ESDprotected.General Features V =20V,I =15ADS DR = 3.6m @ V =4.5VDS(ON) GSSchematic diagramR = 3.7m @ V =4VDS

 8.2. Size:754K  ncepower
 nce20nd07u.pdf

NCE20NP1006S NCE20NP1006S

http://www.ncepower.comNCE20ND07UNCE N-Channel Enhancement Mode Power MOSFETGeneral FeaturesDescription V = 20V,I =7ADS DThe NCE20ND07U uses advanced trench technology and designR

 8.3. Size:322K  ncepower
 nce20nd06.pdf

NCE20NP1006S NCE20NP1006S

Pb Free Producthttp://www.ncepower.com NCE20ND06NCE N-Channel Enhancement Mode Power MOSFET Description The NCE20ND06 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram General Features V

 8.4. Size:640K  ncepower
 nce20nd08u.pdf

NCE20NP1006S NCE20NP1006S

NCE20ND08Uhttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE20ND08U uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =20V,I =12ADS DR

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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