NCE20NP1006S - описание и поиск аналогов

 ..1. Size:412K  ncepower
 nce20np1006s.pdf 

http //www.ncepower.com NCE20NP1006S N and P-Channel Enhancement Mode Power MOSFET Description The NCE20NP1006S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-Channel N-channel P-channel VDS = 20V,ID

 8.1. Size:650K  ncepower
 nce20nd15q.pdf 

NCE20ND15Q http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE20ND15Q uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications.It is ESD protected. General Features V =20V,I =15A DS D R = 3.6m @ V =4.5V DS(ON) GS Schematic diagram R = 3.7m @ V =4V DS

 8.2. Size:754K  ncepower
 nce20nd07u.pdf 

http //www.ncepower.com NCE20ND07U NCE N-Channel Enhancement Mode Power MOSFET General Features Description V = 20V,I =7A DS D The NCE20ND07U uses advanced trench technology and design R

 8.3. Size:322K  ncepower
 nce20nd06.pdf 

Pb Free Product http //www.ncepower.com NCE20ND06 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE20ND06 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram General Features V

 8.4. Size:640K  ncepower
 nce20nd08u.pdf 

NCE20ND08U http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE20ND08U uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =20V,I =12A DS D R