NCE20P05Y MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE20P05Y

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 9.2 nS

Cossⓘ - Capacitancia de salida: 190 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm

Encapsulados: SOT23

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NCE20P05Y datasheet

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 nce20p05y.pdf pdf_icon

NCE20P05Y

http //www.ncepower.com NCE20P05Y NCE P-Channel Enhancement Mode Power MOSFET Description The NCE20P05Y uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Schematic diagram General Features V = -20V,I = -5A DS D R

 6.1. Size:732K  ncepower
 nce20p05j.pdf pdf_icon

NCE20P05Y

http //www.ncepower.com NCE20P05J NCE P-Channel Enhancement Mode Power MOSFET Description D The NCE20P05J uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) G voltages .This device is suitable for use as a load switching application and a wide variety of other applications. S General Features Schematic diagram V = -20V,I = -

 7.1. Size:721K  ncepower
 nce20p08j.pdf pdf_icon

NCE20P05Y

http //www.ncepower.com NCE20P08J NCE P-Channel Enhancement Mode Power MOSFET Description D The NCE20P08J uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) G voltages .This device is suitable for use as a load switching application and a wide variety of other applications. S General Features Schematic diagram V = -20V,I = -

 7.2. Size:695K  ncepower
 nce20p09s.pdf pdf_icon

NCE20P05Y

http //www.ncepower.com NCE20P09S NCE P-Channel Enhancement Mode Power MOSFET D1 D2 Description The NCE20P09S uses advanced trench technology to provide G1 G2 excellent R , low gate charge and operation with gate DS(ON) voltages as low as 2.5V. This device is suitable for use as a S1 S2 load switch or in PWM applications. Schematic diagram General Features V = -20V,I = -9A D

MOSTRAR MÁS

Otros transistores... NCE2013J, NCE2014ES, NCE2025I, NCE2025S, NCE2030U, NCE2090K, NCE20NP1006S, NCE20P05J, K2611, NCE20P07N, NCE20P08J, NCE20P09S, NCE20P10J, NCE20P85GU, NCE2301A, NCE2301B, NCE2301C