NCE20P05Y Specs and Replacement

Type Designator: NCE20P05Y

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9.2 nS

Cossⓘ - Output Capacitance: 190 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: SOT23

NCE20P05Y substitution

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NCE20P05Y datasheet

 ..1. Size:603K  ncepower
 nce20p05y.pdf pdf_icon

NCE20P05Y

http //www.ncepower.com NCE20P05Y NCE P-Channel Enhancement Mode Power MOSFET Description The NCE20P05Y uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Schematic diagram General Features V = -20V,I = -5A DS D R ... See More ⇒

 6.1. Size:732K  ncepower
 nce20p05j.pdf pdf_icon

NCE20P05Y

http //www.ncepower.com NCE20P05J NCE P-Channel Enhancement Mode Power MOSFET Description D The NCE20P05J uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) G voltages .This device is suitable for use as a load switching application and a wide variety of other applications. S General Features Schematic diagram V = -20V,I = -... See More ⇒

 7.1. Size:721K  ncepower
 nce20p08j.pdf pdf_icon

NCE20P05Y

http //www.ncepower.com NCE20P08J NCE P-Channel Enhancement Mode Power MOSFET Description D The NCE20P08J uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) G voltages .This device is suitable for use as a load switching application and a wide variety of other applications. S General Features Schematic diagram V = -20V,I = -... See More ⇒

 7.2. Size:695K  ncepower
 nce20p09s.pdf pdf_icon

NCE20P05Y

http //www.ncepower.com NCE20P09S NCE P-Channel Enhancement Mode Power MOSFET D1 D2 Description The NCE20P09S uses advanced trench technology to provide G1 G2 excellent R , low gate charge and operation with gate DS(ON) voltages as low as 2.5V. This device is suitable for use as a S1 S2 load switch or in PWM applications. Schematic diagram General Features V = -20V,I = -9A D... See More ⇒

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Detailed specifications: NCE2013J, NCE2014ES, NCE2025I, NCE2025S, NCE2030U, NCE2090K, NCE20NP1006S, NCE20P05J, K2611, NCE20P07N, NCE20P08J, NCE20P09S, NCE20P10J, NCE20P85GU, NCE2301A, NCE2301B, NCE2301C

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