Справочник MOSFET. NCE20P05Y

 

NCE20P05Y MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NCE20P05Y
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 1.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 9.2 ns
   Cossⓘ - Выходная емкость: 190 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.04 Ohm
   Тип корпуса: SOT23

 Аналог (замена) для NCE20P05Y

 

 

NCE20P05Y Datasheet (PDF)

 ..1. Size:603K  ncepower
 nce20p05y.pdf

NCE20P05Y NCE20P05Y

http://www.ncepower.comNCE20P05YNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE20P05Y uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 2.5V. This device is suitable for use as aload switch or in PWM applications.Schematic diagramGeneral Features V = -20V,I = -5ADS DR

 6.1. Size:732K  ncepower
 nce20p05j.pdf

NCE20P05Y NCE20P05Y

http://www.ncepower.comNCE20P05JNCE P-Channel Enhancement Mode Power MOSFETDescriptionDThe NCE20P05J uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)Gvoltages .This device is suitable for use as a load switchingapplication and a wide variety of other applications.SGeneral FeaturesSchematic diagram V = -20V,I = -

 7.1. Size:721K  ncepower
 nce20p08j.pdf

NCE20P05Y NCE20P05Y

http://www.ncepower.comNCE20P08JNCE P-Channel Enhancement Mode Power MOSFETDescriptionDThe NCE20P08J uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)Gvoltages .This device is suitable for use as a load switchingapplication and a wide variety of other applications.SGeneral FeaturesSchematic diagram V = -20V,I = -

 7.2. Size:695K  ncepower
 nce20p09s.pdf

NCE20P05Y NCE20P05Y

http://www.ncepower.comNCE20P09SNCE P-Channel Enhancement Mode Power MOSFETD1D2DescriptionThe NCE20P09S uses advanced trench technology to provideG1 G2excellent R , low gate charge and operation with gateDS(ON)voltages as low as 2.5V. This device is suitable for use as aS1 S2load switch or in PWM applications.Schematic diagramGeneral Features V = -20V,I = -9AD

 7.3. Size:277K  ncepower
 nce20p07n.pdf

NCE20P05Y NCE20P05Y

http://www.ncepower.com NCE20P07NNCE P-Channel Enhancement Mode Power MOSFET Description The NCE20P07N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features VDS = -20V,ID =

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