FQA170N06 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

FQA170N06 Datasheet (PDF)

..1. Size:690K fairchild semi
fqa170n06.pdf pdf_icon

May 2001TMQFETFQA170N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 170A, 60V, RDS(on) = 0.0056 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 220 nC)planar stripe, DMOS technology. Low Crss ( typical 620 pF)This advanced technology has been especially tailore

..2. Size:2180K onsemi
fqa170n06.pdf pdf_icon

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

9.1. Size:675K fairchild semi
fqa17p10.pdf pdf_icon

TMQFETFQA17P10100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -18A, -100V, RDS(on) = 0.19 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 30 nC)planar stripe, DMOS technology. Low Crss ( typical 100 pF)This advanced technology has been especially tailored to

9.2. Size:746K fairchild semi
fqa17n40.pdf pdf_icon

April 2000TMQFETQFETQFETQFET 400V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 17.2A, 400V, RDS(on) = 0.27 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has bee

Otros transistores... FQA11N90F109 , FQA11N90CF109 , FQA13N50CF , FQA13N80F109 , SDF07N80 , FQA140N10 , SDF07N65 , FQA160N08 , IRFP450 , FQA19N60 , SDF07N50T , FQA24N60 , SDF07N50 , FQA27N25 , FQA28N15 , FQA30N40 , SDF06N60 .