Справочник MOSFET. FQA170N06

 

FQA170N06 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FQA170N06
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 375 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 170 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 220 nC
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0056 Ohm
   Тип корпуса: TO3PN

 Аналог (замена) для FQA170N06

 

 

FQA170N06 Datasheet (PDF)

 ..1. Size:690K  fairchild semi
 fqa170n06.pdf

FQA170N06 FQA170N06

May 2001TMQFETFQA170N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 170A, 60V, RDS(on) = 0.0056 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 220 nC)planar stripe, DMOS technology. Low Crss ( typical 620 pF)This advanced technology has been especially tailore

 ..2. Size:2180K  onsemi
 fqa170n06.pdf

FQA170N06 FQA170N06

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.1. Size:675K  fairchild semi
 fqa17p10.pdf

FQA170N06 FQA170N06

TMQFETFQA17P10100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -18A, -100V, RDS(on) = 0.19 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 30 nC)planar stripe, DMOS technology. Low Crss ( typical 100 pF)This advanced technology has been especially tailored to

 9.2. Size:746K  fairchild semi
 fqa17n40.pdf

FQA170N06 FQA170N06

April 2000TMQFETQFETQFETQFET 400V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 17.2A, 400V, RDS(on) = 0.27 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has bee

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