All MOSFET. FQA170N06 Datasheet

 

FQA170N06 MOSFET. Datasheet pdf. Equivalent

Type Designator: FQA170N06

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 375 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 170 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 220 nC

Maximum Drain-Source On-State Resistance (Rds): 0.0056 Ohm

Package: TO3PN

FQA170N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQA170N06 Datasheet (PDF)

1.1. fqa170n06.pdf Size:690K _fairchild_semi

FQA170N06
FQA170N06

May 2001 TM QFET FQA170N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 170A, 60V, RDS(on) = 0.0056? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 220 nC) planar stripe, DMOS technology. Low Crss ( typical 620 pF) This advanced technology has been especially tailored to Fast

5.1. fqa17n40.pdf Size:746K _upd-mosfet

FQA170N06
FQA170N06

April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 17.2A, 400V, RDS(on) = 0.27Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 45 nC) planar stripe, DMOS technology. • Low Crss ( typical 30 pF) This advanced technology has bee

5.2. fqa17p10.pdf Size:675K _upd-mosfet

FQA170N06
FQA170N06

TM QFET FQA17P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -18A, -100V, RDS(on) = 0.19Ω @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 30 nC) planar stripe, DMOS technology. • Low Crss ( typical 100 pF) This advanced technology has been especially tailored to •

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