FQA170N06 MOSFET. Datasheet pdf. Equivalent
Type Designator: FQA170N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 375 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 170 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 220 nC
Maximum Drain-Source On-State Resistance (Rds): 0.0056 Ohm
Package: TO3PN
FQA170N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQA170N06 Datasheet (PDF)
1.1. fqa170n06.pdf 
Size:690K _fairchild_semi
May 2001 TM QFET FQA170N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 170A, 60V, RDS(on) = 0.0056? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 220 nC) planar stripe, DMOS technology. Low Crss ( typical 620 pF) This advanced technology has been especially tailored to Fast
5.1. fqa17p10.pdf Size:675K _upd-mosfet
TM QFET FQA17P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -18A, -100V, RDS(on) = 0.19Ω @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 30 nC) planar stripe, DMOS technology. • Low Crss ( typical 100 pF) This advanced technology has been especially tailored to •
5.2. fqa17n40.pdf Size:746K _upd-mosfet
April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 17.2A, 400V, RDS(on) = 0.27Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 45 nC) planar stripe, DMOS technology. • Low Crss ( typical 30 pF) This advanced technology has bee
Datasheet: FQA11N90_F109 , FQA11N90C_F109 , FQA13N50CF , FQA13N80_F109 , SDF07N80 , FQA140N10 , SDF07N65 , FQA160N08 , IRF250 , FQA19N60 , SDF07N50T , FQA24N60 , SDF07N50 , FQA27N25 , FQA28N15 , FQA30N40 , SDF06N60 .
