NCE3080L Todos los transistores

 

NCE3080L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE3080L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 83 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 460 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm
   Paquete / Cubierta: TO-251
 

 Búsqueda de reemplazo de NCE3080L MOSFET

   - Selección ⓘ de transistores por parámetros

 

NCE3080L Datasheet (PDF)

 ..1. Size:321K  ncepower
 nce3080l.pdf pdf_icon

NCE3080L

Pb Free Producthttp://www.ncepower.com NCE3080LNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3080L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)

 7.1. Size:384K  ncepower
 nce3080k.pdf pdf_icon

NCE3080L

Pb Free Producthttp://www.ncepower.com NCE3080KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3080K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)

 7.2. Size:312K  ncepower
 nce3080i.pdf pdf_icon

NCE3080L

Pb Free Producthttp://www.ncepower.com NCE3080INCE N-Channel Enhancement Mode Power MOSFET Description The NCE3080I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)

 7.3. Size:296K  ncepower
 nce3080ia.pdf pdf_icon

NCE3080L

Pb Free Producthttp://www.ncepower.com NCE3080IANCE N-Channel Enhancement Mode Power MOSFET Description The NCE3080IA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)

MOSTRAR MÁS

Otros transistores... NCE3040Q , NCE3045G , NCE3050I , NCE3050KA , NCE3055 , NCE3065G , NCE3065Q , NCE3080I , STP75NF75 , NCE3085K , NCE30H10BG , NCE30H10G , NCE30H11BG , NCE30H11G , NCE30H12AK , NCE30H15B , NCE30H15BG .

History: SQJ962EP | MCH3382 | UF630

 

 
Back to Top

 


 
.