NCE3080L Specs and Replacement
Type Designator: NCE3080L
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 460 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: TO-251
NCE3080L substitution
- MOSFET ⓘ Cross-Reference Search
NCE3080L datasheet
nce3080k.pdf
Pb Free Product http //www.ncepower.com NCE3080K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3080K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON) ... See More ⇒
nce3080i.pdf
Pb Free Product http //www.ncepower.com NCE3080I NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3080I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON) ... See More ⇒
Detailed specifications: NCE3040Q, NCE3045G, NCE3050I, NCE3050KA, NCE3055, NCE3065G, NCE3065Q, NCE3080I, IRFP250N, NCE3085K, NCE30H10BG, NCE30H10G, NCE30H11BG, NCE30H11G, NCE30H12AK, NCE30H15B, NCE30H15BG
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