NCE3085K Todos los transistores

 

NCE3085K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE3085K
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 85 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 85 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 9 nS
   Cossⓘ - Capacitancia de salida: 220 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0091 Ohm
   Paquete / Cubierta: TO252
 

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NCE3085K Datasheet (PDF)

 ..1. Size:674K  ncepower
 nce3085k.pdf pdf_icon

NCE3085K

Pb Free Producthttp://www.ncepower.comNCE3085KNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE3085K uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =30V,I =85ADS DR =4.2 m @ V =10V (Typ) Schematic diagramDS(ON) GSR =7.0m @ V =4.5V (Typ)

 8.1. Size:384K  ncepower
 nce3080k.pdf pdf_icon

NCE3085K

Pb Free Producthttp://www.ncepower.com NCE3080KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3080K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)

 8.2. Size:312K  ncepower
 nce3080i.pdf pdf_icon

NCE3085K

Pb Free Producthttp://www.ncepower.com NCE3080INCE N-Channel Enhancement Mode Power MOSFET Description The NCE3080I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)

 8.3. Size:321K  ncepower
 nce3080l.pdf pdf_icon

NCE3085K

Pb Free Producthttp://www.ncepower.com NCE3080LNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3080L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)

MOSTRAR MÁS

Otros transistores... NCE3045G , NCE3050I , NCE3050KA , NCE3055 , NCE3065G , NCE3065Q , NCE3080I , NCE3080L , 7N65 , NCE30H10BG , NCE30H10G , NCE30H11BG , NCE30H11G , NCE30H12AK , NCE30H15B , NCE30H15BG , NCE30H15BK .

History: STB6NK60Z-1 | IPP065N06LG | IRLZ24PBF | SSP65R065SFD3 | NP100N055PUH | WNM07N65 | IRLZ14L

 

 
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