NCE3085K MOSFET. Datasheet pdf. Equivalent
Type Designator: NCE3085K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 85 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 85 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 31.3 nC
trⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 220 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0091 Ohm
Package: TO252
NCE3085K Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCE3085K Datasheet (PDF)
nce3085k.pdf
Pb Free Producthttp://www.ncepower.comNCE3085KNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE3085K uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =30V,I =85ADS DR =4.2 m @ V =10V (Typ) Schematic diagramDS(ON) GSR =7.0m @ V =4.5V (Typ)
nce3080k.pdf
Pb Free Producthttp://www.ncepower.com NCE3080KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3080K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)
nce3080i.pdf
Pb Free Producthttp://www.ncepower.com NCE3080INCE N-Channel Enhancement Mode Power MOSFET Description The NCE3080I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)
nce3080l.pdf
Pb Free Producthttp://www.ncepower.com NCE3080LNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3080L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)
nce3080ia.pdf
Pb Free Producthttp://www.ncepower.com NCE3080IANCE N-Channel Enhancement Mode Power MOSFET Description The NCE3080IA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)
nce3080ka.pdf
Pb Free Producthttp://www.ncepower.com NCE3080KANCE N-Channel Enhancement Mode Power MOSFET Description The NCE3080KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)
nce3080ka.pdf
NCE3080KAwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.002 at VGS = 10 V 10030 72 nC0.003 at VGS = 4.5 V 90APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D STop ViewSN-Channel MOSFETABS
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