NCE30ND35Q Todos los transistores

 

NCE30ND35Q MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE30ND35Q
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 30 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 35 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 180.8 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.023 Ohm
   Paquete / Cubierta: PDFN3.3X3.3-8L
 
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NCE30ND35Q Datasheet (PDF)

 ..1. Size:651K  ncepower
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NCE30ND35Q

http://www.ncepower.comNCE30ND35QNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE30ND35Q uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =30V,I =35A Schematic DiagramDS DR

 7.1. Size:356K  ncepower
 nce30nd07s.pdf pdf_icon

NCE30ND35Q

Pb Free ProductNCE30ND07Shttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30ND07S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDS =30V,ID =7A RDS(ON)

 7.2. Size:368K  ncepower
 nce30nd07as.pdf pdf_icon

NCE30ND35Q

NCE30ND07AShttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30ND07AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Schematic diagram General Features VDS =30V,ID =7A RDS(ON)

 7.3. Size:292K  ncepower
 nce30nd07bs.pdf pdf_icon

NCE30ND35Q

NCE30ND07BShttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30ND07BS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Schematic diagram General Features VDS =30V,ID =6.5A RDS(ON)

MOSTRAR MÁS

Otros transistores... NCE30H10G , NCE30H11BG , NCE30H11G , NCE30H12AK , NCE30H15B , NCE30H15BG , NCE30H15BK , NCE30H33LL , SPP20N60C3 , NCE30NP1812G , NCE30NP1812Q , NCE30NP4030G , NCE30P06J , NCE30P10S , NCE30P12BS , NCE30P15AS , NCE30P16Q .

 

 
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