Справочник MOSFET. NCE30ND35Q

 

NCE30ND35Q MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NCE30ND35Q
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 30 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 35 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 17 nC
   trⓘ - Время нарастания: 12 ns
   Cossⓘ - Выходная емкость: 180.8 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.023 Ohm
   Тип корпуса: PDFN3.3X3.3-8L

 Аналог (замена) для NCE30ND35Q

 

 

NCE30ND35Q Datasheet (PDF)

 ..1. Size:651K  ncepower
 nce30nd35q.pdf

NCE30ND35Q NCE30ND35Q

http://www.ncepower.comNCE30ND35QNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE30ND35Q uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =30V,I =35A Schematic DiagramDS DR

 7.1. Size:356K  ncepower
 nce30nd07s.pdf

NCE30ND35Q NCE30ND35Q

Pb Free ProductNCE30ND07Shttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30ND07S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDS =30V,ID =7A RDS(ON)

 7.2. Size:368K  ncepower
 nce30nd07as.pdf

NCE30ND35Q NCE30ND35Q

NCE30ND07AShttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30ND07AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Schematic diagram General Features VDS =30V,ID =7A RDS(ON)

 7.3. Size:292K  ncepower
 nce30nd07bs.pdf

NCE30ND35Q NCE30ND35Q

NCE30ND07BShttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30ND07BS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Schematic diagram General Features VDS =30V,ID =6.5A RDS(ON)

 7.4. Size:384K  ncepower
 nce30nd09s.pdf

NCE30ND35Q NCE30ND35Q

Pb Free Producthttp://www.ncepower.com NCE30ND09SNCE N-Channel Enhancement Mode Power MOSFET Description The NCE30ND09S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Schematic diagram General Features VDS =30V,ID =9A RDS(ON)

Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
Back to Top