All MOSFET. NCE30ND35Q Datasheet

 

NCE30ND35Q MOSFET. Datasheet pdf. Equivalent


   Type Designator: NCE30ND35Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 35 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 17 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 180.8 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: PDFN3.3X3.3-8L

 NCE30ND35Q Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCE30ND35Q Datasheet (PDF)

 ..1. Size:651K  ncepower
 nce30nd35q.pdf

NCE30ND35Q NCE30ND35Q

http://www.ncepower.comNCE30ND35QNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE30ND35Q uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =30V,I =35A Schematic DiagramDS DR

 7.1. Size:356K  ncepower
 nce30nd07s.pdf

NCE30ND35Q NCE30ND35Q

Pb Free ProductNCE30ND07Shttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30ND07S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDS =30V,ID =7A RDS(ON)

 7.2. Size:368K  ncepower
 nce30nd07as.pdf

NCE30ND35Q NCE30ND35Q

NCE30ND07AShttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30ND07AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Schematic diagram General Features VDS =30V,ID =7A RDS(ON)

 7.3. Size:292K  ncepower
 nce30nd07bs.pdf

NCE30ND35Q NCE30ND35Q

NCE30ND07BShttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30ND07BS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Schematic diagram General Features VDS =30V,ID =6.5A RDS(ON)

 7.4. Size:384K  ncepower
 nce30nd09s.pdf

NCE30ND35Q NCE30ND35Q

Pb Free Producthttp://www.ncepower.com NCE30ND09SNCE N-Channel Enhancement Mode Power MOSFET Description The NCE30ND09S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Schematic diagram General Features VDS =30V,ID =9A RDS(ON)

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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