NCE30P16Q MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE30P16Q
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 30 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 16 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10 nS
Cossⓘ - Capacitancia de salida: 250 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm
Paquete / Cubierta: DFN3X3
- Selección de transistores por parámetros
NCE30P16Q Datasheet (PDF)
nce30p16q.pdf

Pb Free Producthttp://www.ncepower.com NCE30P16QNCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P16Q uses advanced trench technology to provide excellent RDS(ON), low gate charge . This device is suitable for use as a load switch or in PWM applications. General Features VDS = -30V,ID = -16A RDS(ON)
nce30p15s.pdf

Pb Free Producthttp://www.ncepower.com NCE30P15SNCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P15S uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. General Features Schematic diagram VDS = -30V,ID = -15A RDS(ON)
nce30p12bs.pdf

http://www.ncepower.comNCE30P12BSNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE30P12BS uses advanced trench technology toprovide excellent R , low gate charge and operation withDS(ON)gate voltages as low as 4.5V. This device is suitable for use asa load switch or in PWM applications.General Features V = -30V,I = -12A Schematic diagramDS DR
nce30p12s.pdf

Pb Free Producthttp://www.ncepower.com NCE30P12SNCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P12S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. General Features Schematic diagram VDS = -30V,ID = -1
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: SI2202 | SIHF10N40D | SL4813A
History: SI2202 | SIHF10N40D | SL4813A



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: DHF10H035R | DHF100N03B13 | DHF035N04 | DHEZ24B31 | DHESJ17N65 | DHESJ13N65 | DHESJ11N65 | DHE9Z24 | DHE90N055R | DHE90N045R | DHE85N08 | DHE8290 | DHE80N08B22 | DHE8004 | DHE50N15 | DHE50N06FZC
Popular searches
tip31 | tip122 transistor | 2sc1079 | 2sc1815 equivalent | 2sa1220 | 2sa940 | 2sc627 | 2sc680