NCE30P16Q. Аналоги и основные параметры

Наименование производителя: NCE30P16Q

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 30 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 16 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 10 ns

Cossⓘ - Выходная емкость: 250 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.03 Ohm

Тип корпуса: DFN3X3

Аналог (замена) для NCE30P16Q

- подборⓘ MOSFET транзистора по параметрам

 

NCE30P16Q даташит

 ..1. Size:301K  ncepower
 nce30p16q.pdf pdf_icon

NCE30P16Q

Pb Free Product http //www.ncepower.com NCE30P16Q NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P16Q uses advanced trench technology to provide excellent RDS(ON), low gate charge . This device is suitable for use as a load switch or in PWM applications. General Features VDS = -30V,ID = -16A RDS(ON)

 7.1. Size:341K  ncepower
 nce30p15s.pdf pdf_icon

NCE30P16Q

Pb Free Product http //www.ncepower.com NCE30P15S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P15S uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. General Features Schematic diagram VDS = -30V,ID = -15A RDS(ON)

 7.2. Size:710K  ncepower
 nce30p12bs.pdf pdf_icon

NCE30P16Q

http //www.ncepower.com NCE30P12BS NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P12BS uses advanced trench technology to provide excellent R , low gate charge and operation with DS(ON) gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. General Features V = -30V,I = -12A Schematic diagram DS D R

 7.3. Size:364K  ncepower
 nce30p12s.pdf pdf_icon

NCE30P16Q

Pb Free Product http //www.ncepower.com NCE30P12S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P12S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. General Features Schematic diagram VDS = -30V,ID = -1

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... NCE30ND35Q, NCE30NP1812G, NCE30NP1812Q, NCE30NP4030G, NCE30P06J, NCE30P10S, NCE30P12BS, NCE30P15AS, 12N60, NCE30P25BQ, NCE30P25Q, NCE30P30L, NCE30P40K, NCE30P55K, NCE30P55L, NCE30P60G, NCE30P85K