NCE30P16Q Specs and Replacement

Type Designator: NCE30P16Q

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 250 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: DFN3X3

NCE30P16Q substitution

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NCE30P16Q datasheet

 ..1. Size:301K  ncepower
 nce30p16q.pdf pdf_icon

NCE30P16Q

Pb Free Product http //www.ncepower.com NCE30P16Q NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P16Q uses advanced trench technology to provide excellent RDS(ON), low gate charge . This device is suitable for use as a load switch or in PWM applications. General Features VDS = -30V,ID = -16A RDS(ON) ... See More ⇒

 7.1. Size:341K  ncepower
 nce30p15s.pdf pdf_icon

NCE30P16Q

Pb Free Product http //www.ncepower.com NCE30P15S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P15S uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. General Features Schematic diagram VDS = -30V,ID = -15A RDS(ON) ... See More ⇒

 7.2. Size:710K  ncepower
 nce30p12bs.pdf pdf_icon

NCE30P16Q

http //www.ncepower.com NCE30P12BS NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P12BS uses advanced trench technology to provide excellent R , low gate charge and operation with DS(ON) gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. General Features V = -30V,I = -12A Schematic diagram DS D R ... See More ⇒

 7.3. Size:364K  ncepower
 nce30p12s.pdf pdf_icon

NCE30P16Q

Pb Free Product http //www.ncepower.com NCE30P12S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P12S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. General Features Schematic diagram VDS = -30V,ID = -1... See More ⇒

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Detailed specifications: NCE30ND35Q, NCE30NP1812G, NCE30NP1812Q, NCE30NP4030G, NCE30P06J, NCE30P10S, NCE30P12BS, NCE30P15AS, 12N60, NCE30P25BQ, NCE30P25Q, NCE30P30L, NCE30P40K, NCE30P55K, NCE30P55L, NCE30P60G, NCE30P85K

Keywords - NCE30P16Q MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs