NCE3417 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE3417

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.8 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 12 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 4.4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 36 nS

Cossⓘ - Capacitancia de salida: 280 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.056 Ohm

Encapsulados: SOT-23

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NCE3417 datasheet

 ..1. Size:272K  ncepower
 nce3417.pdf pdf_icon

NCE3417

Pb Free Product http //www.ncepower.com NCE3417 NCE P-Channel Enhancement Mode Power MOSFET Description D The NCE3417 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S General Features Schematic diagram VDS = -12V,ID

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 nce3415y.pdf pdf_icon

NCE3417

Pb Free Product http //www.ncepower.com NCE3415Y NCE P-Channel Enhancement Mode Power MOSFET Description The NCE3415Y uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features

 8.2. Size:283K  ncepower
 nce3415.pdf pdf_icon

NCE3417

Pb Free Product http //www.ncepower.com NCE3415 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE3415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features VDS = -20V,ID =-4A S

 8.3. Size:261K  ncepower
 nce3416.pdf pdf_icon

NCE3417

Pb Free Product http //www.ncepower.com NCE3416 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3416 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features VDS = 20V,ID =6.5A Sc

MOSTRAR MÁS

Otros transistores... NCE3401Y, NCE3402, NCE3402A, NCE3406AN, NCE3407A, NCE3407E, NCE3415E, NCE3415Y, 18N50, NCE3420X, NCE3N150, NCE3N150D, NCE3N150F, NCE3N150PF, NCE3N150T, NCE3N170, NCE3N170D