NCE3417 Datasheet. Specs and Replacement

Type Designator: NCE3417  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 4.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 36 nS

Cossⓘ - Output Capacitance: 280 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.056 Ohm

Package: SOT-23

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NCE3417 datasheet

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NCE3417

Pb Free Product http //www.ncepower.com NCE3417 NCE P-Channel Enhancement Mode Power MOSFET Description D The NCE3417 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S General Features Schematic diagram VDS = -12V,ID... See More ⇒

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 nce3415y.pdf pdf_icon

NCE3417

Pb Free Product http //www.ncepower.com NCE3415Y NCE P-Channel Enhancement Mode Power MOSFET Description The NCE3415Y uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features ... See More ⇒

 8.2. Size:283K  ncepower
 nce3415.pdf pdf_icon

NCE3417

Pb Free Product http //www.ncepower.com NCE3415 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE3415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features VDS = -20V,ID =-4A S... See More ⇒

 8.3. Size:261K  ncepower
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NCE3417

Pb Free Product http //www.ncepower.com NCE3416 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3416 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features VDS = 20V,ID =6.5A Sc... See More ⇒

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Detailed specifications: NCE3401Y, NCE3402, NCE3402A, NCE3406AN, NCE3407A, NCE3407E, NCE3415E, NCE3415Y, STP65NF06, NCE3420X, NCE3N150, NCE3N150D, NCE3N150F, NCE3N150PF, NCE3N150T, NCE3N170, NCE3N170D

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.