NCE3417 MOSFET Datasheet: P-Ch, 12V, 4.4A. Full specification with pinout and replacement list

NCE3417 Specs and Replacement

   Type Designator: NCE3417
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 1.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 4.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 280 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.056 Ohm
   Package: SOT-23

NCE3417 substitution

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NCE3417 datasheet

..1. Size:272K ncepower
nce3417.pdf pdf_icon

Pb Free Product http //www.ncepower.com NCE3417 NCE P-Channel Enhancement Mode Power MOSFET Description D The NCE3417 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S General Features Schematic diagram VDS = -12V,ID... See More ⇒

8.1. Size:263K ncepower
nce3415y.pdf pdf_icon

Pb Free Product http //www.ncepower.com NCE3415Y NCE P-Channel Enhancement Mode Power MOSFET Description The NCE3415Y uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features ... See More ⇒

8.2. Size:283K ncepower
nce3415.pdf pdf_icon

Pb Free Product http //www.ncepower.com NCE3415 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE3415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features VDS = -20V,ID =-4A S... See More ⇒

8.3. Size:261K ncepower
nce3416.pdf pdf_icon

Pb Free Product http //www.ncepower.com NCE3416 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3416 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features VDS = 20V,ID =6.5A Sc... See More ⇒