Справочник MOSFET. NCE3417

 

NCE3417 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE3417
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 1.8 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 12 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 4.4 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   Qg ⓘ - Общий заряд затвора: 8.1 nC
   tr ⓘ - Время нарастания: 36 ns
   Cossⓘ - Выходная емкость: 280 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.056 Ohm
   Тип корпуса: SOT-23
 

 Аналог (замена) для NCE3417

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCE3417 Datasheet (PDF)

 ..1. Size:272K  ncepower
 nce3417.pdf pdf_icon

NCE3417

Pb Free Producthttp://www.ncepower.com NCE3417NCE P-Channel Enhancement Mode Power MOSFET Description DThe NCE3417 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SGeneral Features Schematic diagram VDS = -12V,ID

 8.1. Size:263K  ncepower
 nce3415y.pdf pdf_icon

NCE3417

Pb Free Producthttp://www.ncepower.com NCE3415YNCE P-Channel Enhancement Mode Power MOSFET Description The NCE3415Y uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features

 8.2. Size:283K  ncepower
 nce3415.pdf pdf_icon

NCE3417

Pb Free Producthttp://www.ncepower.com NCE3415NCE P-Channel Enhancement Mode Power MOSFET Description The NCE3415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features VDS = -20V,ID =-4A S

 8.3. Size:261K  ncepower
 nce3416.pdf pdf_icon

NCE3417

Pb Free Producthttp://www.ncepower.com NCE3416NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3416 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features VDS = 20V,ID =6.5A Sc

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