NCE3N150 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE3N150

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 187 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 1500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 3 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 45 nS

Cossⓘ - Capacitancia de salida: 61 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 7.5 Ohm

Encapsulados: TO-220

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NCE3N150 datasheet

 ..1. Size:638K  ncepower
 nce3n150.pdf pdf_icon

NCE3N150

NCE3N150 N-Channel Enhancement Mode Power MOSFET General Description The series of Power MOSFETs use advanced V 1650 V DS min@Tjmax technology and design.This high voltage MOSFET fits R 5.5 DS(ON)TYP Switched applications. ID 3 A Qg 32 nC Features High speed switching Intrinsic capacitances and Qg minimized 100% Avalanche Tested Application Switched applications

 0.1. Size:627K  ncepower
 nce3n150t.pdf pdf_icon

NCE3N150

NCE3N150T N-Channel Enhancement Mode Power MOSFET General Description The series of Power MOSFETs use advanced V 1650 V DS min@Tjmax technology and design.This high voltage MOSFET fits R 5.5 DS(ON)TYP Switched applications. ID 3 A Qg 32 nC Features High speed switching Intrinsic capacitances and Qg minimized 100% Avalanche Tested Application Switched applications

 0.2. Size:619K  ncepower
 nce3n150d.pdf pdf_icon

NCE3N150

NCE3N150D N-Channel Enhancement Mode Power MOSFET General Description The series of Power MOSFETs use advanced V 1650 V DS min@Tjmax technology and design.This high voltage MOSFET fits R 5.5 DS(ON)TYP Switched applications. ID 3 A Qg 32 nC Features High speed switching Intrinsic capacitances and Qg minimized 100% Avalanche Tested Application Switched applications

 0.3. Size:608K  ncepower
 nce3n150f.pdf pdf_icon

NCE3N150

NCE3N150F N-Channel Enhancement Mode Power MOSFET General Description The series of Power MOSFETs use advanced V 1650 V DS min@Tjmax technology and design.This high voltage MOSFET fits R 5.5 DS(ON)TYP Switched applications. ID 3 A Qg 32 nC Features High speed switching Intrinsic capacitances and Qg minimized 100% Avalanche Tested Application Switched applications

MOSTRAR MÁS

Otros transistores... NCE3402A, NCE3406AN, NCE3407A, NCE3407E, NCE3415E, NCE3415Y, NCE3417, NCE3420X, IRF520, NCE3N150D, NCE3N150F, NCE3N150PF, NCE3N150T, NCE3N170, NCE3N170D, NCE3N170F, NCE3N170PF