NCE3N150 Todos los transistores

 

NCE3N150 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE3N150
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 187 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 1500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 45 nS
   Cossⓘ - Capacitancia de salida: 61 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 7.5 Ohm
   Paquete / Cubierta: TO-220
 

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NCE3N150 Datasheet (PDF)

 ..1. Size:638K  ncepower
 nce3n150.pdf pdf_icon

NCE3N150

NCE3N150N-Channel Enhancement Mode Power MOSFETGeneral DescriptionThe series of Power MOSFETs use advanced V 1650 VDS min@Tjmaxtechnology and design.This high voltage MOSFET fitsR 5.5 DS(ON)TYPSwitched applications.ID 3 AQg 32 nCFeaturesHigh speed switchingIntrinsic capacitances and Qg minimized100% Avalanche TestedApplication Switched applications

 0.1. Size:627K  ncepower
 nce3n150t.pdf pdf_icon

NCE3N150

NCE3N150TN-Channel Enhancement Mode Power MOSFETGeneral DescriptionThe series of Power MOSFETs use advanced V 1650 VDS min@Tjmaxtechnology and design.This high voltage MOSFET fitsR 5.5 DS(ON)TYPSwitched applications.ID 3 AQg 32 nCFeaturesHigh speed switchingIntrinsic capacitances and Qg minimized100% Avalanche TestedApplication Switched applications

 0.2. Size:619K  ncepower
 nce3n150d.pdf pdf_icon

NCE3N150

NCE3N150DN-Channel Enhancement Mode Power MOSFETGeneral DescriptionThe series of Power MOSFETs use advanced V 1650 VDS min@Tjmaxtechnology and design.This high voltage MOSFET fitsR 5.5 DS(ON)TYPSwitched applications.ID 3 AQg 32 nCFeaturesHigh speed switchingIntrinsic capacitances and Qg minimized100% Avalanche TestedApplication Switched applications

 0.3. Size:608K  ncepower
 nce3n150f.pdf pdf_icon

NCE3N150

NCE3N150FN-Channel Enhancement Mode Power MOSFETGeneral DescriptionThe series of Power MOSFETs use advanced V 1650 VDS min@Tjmaxtechnology and design.This high voltage MOSFET fitsR 5.5 DS(ON)TYPSwitched applications.ID 3 AQg 32 nCFeaturesHigh speed switchingIntrinsic capacitances and Qg minimized100% Avalanche TestedApplication Switched applications

MOSTRAR MÁS

Otros transistores... NCE3402A , NCE3406AN , NCE3407A , NCE3407E , NCE3415E , NCE3415Y , NCE3417 , NCE3420X , CS150N03A8 , NCE3N150D , NCE3N150F , NCE3N150PF , NCE3N150T , NCE3N170 , NCE3N170D , NCE3N170F , NCE3N170PF .

History: IPP60R299CP | FP3W90 | AF5N60S | HSU6113 | RU1C002ZP | JCS2N60RB

 

 
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