NCE3N150 MOSFET Datasheet: N-Ch, 1500V, 3A. Full specification with pinout and replacement list

NCE3N150 Specs and Replacement

   Type Designator: NCE3N150
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 187 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 61 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 7.5 Ohm
   Package: TO-220

NCE3N150 substitution

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NCE3N150 datasheet

..1. Size:638K ncepower
nce3n150.pdf pdf_icon

NCE3N150 N-Channel Enhancement Mode Power MOSFET General Description The series of Power MOSFETs use advanced V 1650 V DS min@Tjmax technology and design.This high voltage MOSFET fits R 5.5 DS(ON)TYP Switched applications. ID 3 A Qg 32 nC Features High speed switching Intrinsic capacitances and Qg minimized 100% Avalanche Tested Application Switched applications ... See More ⇒

0.1. Size:627K ncepower
nce3n150t.pdf pdf_icon

NCE3N150T N-Channel Enhancement Mode Power MOSFET General Description The series of Power MOSFETs use advanced V 1650 V DS min@Tjmax technology and design.This high voltage MOSFET fits R 5.5 DS(ON)TYP Switched applications. ID 3 A Qg 32 nC Features High speed switching Intrinsic capacitances and Qg minimized 100% Avalanche Tested Application Switched applications... See More ⇒

0.2. Size:619K ncepower
nce3n150d.pdf pdf_icon

NCE3N150D N-Channel Enhancement Mode Power MOSFET General Description The series of Power MOSFETs use advanced V 1650 V DS min@Tjmax technology and design.This high voltage MOSFET fits R 5.5 DS(ON)TYP Switched applications. ID 3 A Qg 32 nC Features High speed switching Intrinsic capacitances and Qg minimized 100% Avalanche Tested Application Switched applications... See More ⇒

0.3. Size:608K ncepower
nce3n150f.pdf pdf_icon

NCE3N150F N-Channel Enhancement Mode Power MOSFET General Description The series of Power MOSFETs use advanced V 1650 V DS min@Tjmax technology and design.This high voltage MOSFET fits R 5.5 DS(ON)TYP Switched applications. ID 3 A Qg 32 nC Features High speed switching Intrinsic capacitances and Qg minimized 100% Avalanche Tested Application Switched applications... See More ⇒