NCE3N170 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE3N170

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 187 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 1700 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 2.9 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 60 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 8 Ohm

Encapsulados: TO-220

 Búsqueda de reemplazo de NCE3N170 MOSFET

- Selecciónⓘ de transistores por parámetros

 

NCE3N170 datasheet

 ..1. Size:654K  ncepower
 nce3n170.pdf pdf_icon

NCE3N170

NCE3N170 N-Channel Enhancement Mode Power MOSFET General Description The series of Power MOSFETs use advanced V 1850 V DS min@Tjmax technology and design.This high voltage MOSFET fits R 6 DS(ON)TYP Switched applications. ID 2.9 A Qg 33 nC Features High speed switching Intrinsic capacitances and Qg minimized 100% Avalanche Tested Application Switched applications

 0.1. Size:625K  ncepower
 nce3n170f.pdf pdf_icon

NCE3N170

NCE3N170F N-Channel Enhancement Mode Power MOSFET General Description The series of Power MOSFETs use advanced V 1850 V DS min@Tjmax technology and design.This high voltage MOSFET fits R 6 DS(ON)TYP Switched applications. ID 2.9 A Qg 33 nC Features High speed switching Intrinsic capacitances and Qg minimized 100% Avalanche Tested Application Switched applications

 0.2. Size:635K  ncepower
 nce3n170d.pdf pdf_icon

NCE3N170

NCE3N170D N-Channel Enhancement Mode Power MOSFET General Description The series of Power MOSFETs use advanced V 1850 V DS min@Tjmax technology and design.This high voltage MOSFET fits R 6 DS(ON)TYP Switched applications. ID 2.9 A Qg 33 nC Features High speed switching Intrinsic capacitances and Qg minimized 100% Avalanche Tested Application Switched applications

 0.3. Size:643K  ncepower
 nce3n170t.pdf pdf_icon

NCE3N170

NCE3N170T N-Channel Enhancement Mode Power MOSFET General Description The series of Power MOSFETs use advanced V 1850 V DS min@Tjmax technology and design.This high voltage MOSFET fits R 6 DS(ON)TYP Switched applications. ID 2.9 A Qg 33 nC Features High speed switching Intrinsic capacitances and Qg minimized 100% Avalanche Tested Application Switched applications

MOSTRAR MÁS

Otros transistores... NCE3415Y, NCE3417, NCE3420X, NCE3N150, NCE3N150D, NCE3N150F, NCE3N150PF, NCE3N150T, 8N60, NCE3N170D, NCE3N170F, NCE3N170PF, NCE3N170T, NCE4003, NCE4005, NCE4015S, NCE4090G