NCE3N170 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NCE3N170
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 187 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 1700 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 2.9 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 33 nC
   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 60 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 8 Ohm
   Paquete / Cubierta: TO-220

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NCE3N170 Datasheet (PDF)

..1. Size:654K ncepower
nce3n170.pdf

NCE3N170N-Channel Enhancement Mode Power MOSFETGeneral DescriptionThe series of Power MOSFETs use advanced V 1850 VDS min@Tjmaxtechnology and design.This high voltage MOSFET fitsR 6 DS(ON)TYPSwitched applications.ID 2.9 AQg 33 nCFeaturesHigh speed switchingIntrinsic capacitances and Qg minimized100% Avalanche TestedApplication Switched applications

0.1. Size:625K ncepower
nce3n170f.pdf

NCE3N170FN-Channel Enhancement Mode Power MOSFETGeneral DescriptionThe series of Power MOSFETs use advanced V 1850 VDS min@Tjmaxtechnology and design.This high voltage MOSFET fitsR 6 DS(ON)TYPSwitched applications.ID 2.9 AQg 33 nCFeaturesHigh speed switchingIntrinsic capacitances and Qg minimized100% Avalanche TestedApplication Switched applications

0.2. Size:635K ncepower
nce3n170d.pdf

NCE3N170DN-Channel Enhancement Mode Power MOSFETGeneral DescriptionThe series of Power MOSFETs use advanced V 1850 VDS min@Tjmaxtechnology and design.This high voltage MOSFET fitsR 6 DS(ON)TYPSwitched applications.ID 2.9 AQg 33 nCFeaturesHigh speed switchingIntrinsic capacitances and Qg minimized100% Avalanche TestedApplication Switched applications

0.3. Size:643K ncepower
nce3n170t.pdf

NCE3N170TN-Channel Enhancement Mode Power MOSFETGeneral DescriptionThe series of Power MOSFETs use advanced V 1850 VDS min@Tjmaxtechnology and design.This high voltage MOSFET fitsR 6 DS(ON)TYPSwitched applications.ID 2.9 AQg 33 nCFeaturesHigh speed switchingIntrinsic capacitances and Qg minimized100% Avalanche TestedApplication Switched applications

0.4. Size:664K ncepower
nce3n170pf.pdf

NCE3N170PFN-Channel Enhancement Mode Power MOSFETGeneral DescriptionThe series of Power MOSFETs use advanced V 1850 VDS min@Tjmaxtechnology and design.This high voltage MOSFET fitsR 6 DS(ON)TYPSwitched applications.ID 2.9 AQg 33 nCFeaturesHigh speed switchingIntrinsic capacitances and Qg minimized100% Avalanche TestedApplication Switched application

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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