All MOSFET. NCE3N170 Datasheet

 

NCE3N170 Datasheet and Replacement


   Type Designator: NCE3N170
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 187 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 2.9 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
   Package: TO-220
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NCE3N170 Datasheet (PDF)

 ..1. Size:654K  ncepower
 nce3n170.pdf pdf_icon

NCE3N170

NCE3N170N-Channel Enhancement Mode Power MOSFETGeneral DescriptionThe series of Power MOSFETs use advanced V 1850 VDS min@Tjmaxtechnology and design.This high voltage MOSFET fitsR 6 DS(ON)TYPSwitched applications.ID 2.9 AQg 33 nCFeaturesHigh speed switchingIntrinsic capacitances and Qg minimized100% Avalanche TestedApplication Switched applications

 0.1. Size:625K  ncepower
 nce3n170f.pdf pdf_icon

NCE3N170

NCE3N170FN-Channel Enhancement Mode Power MOSFETGeneral DescriptionThe series of Power MOSFETs use advanced V 1850 VDS min@Tjmaxtechnology and design.This high voltage MOSFET fitsR 6 DS(ON)TYPSwitched applications.ID 2.9 AQg 33 nCFeaturesHigh speed switchingIntrinsic capacitances and Qg minimized100% Avalanche TestedApplication Switched applications

 0.2. Size:635K  ncepower
 nce3n170d.pdf pdf_icon

NCE3N170

NCE3N170DN-Channel Enhancement Mode Power MOSFETGeneral DescriptionThe series of Power MOSFETs use advanced V 1850 VDS min@Tjmaxtechnology and design.This high voltage MOSFET fitsR 6 DS(ON)TYPSwitched applications.ID 2.9 AQg 33 nCFeaturesHigh speed switchingIntrinsic capacitances and Qg minimized100% Avalanche TestedApplication Switched applications

 0.3. Size:643K  ncepower
 nce3n170t.pdf pdf_icon

NCE3N170

NCE3N170TN-Channel Enhancement Mode Power MOSFETGeneral DescriptionThe series of Power MOSFETs use advanced V 1850 VDS min@Tjmaxtechnology and design.This high voltage MOSFET fitsR 6 DS(ON)TYPSwitched applications.ID 2.9 AQg 33 nCFeaturesHigh speed switchingIntrinsic capacitances and Qg minimized100% Avalanche TestedApplication Switched applications

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