NCE3N170 PDF and Equivalents Search

 

NCE3N170 PDF Specs and Replacement


   Type Designator: NCE3N170
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 187 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2.9 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
   Package: TO-220
 

 NCE3N170 substitution

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NCE3N170 PDF Specs

 ..1. Size:654K  ncepower
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NCE3N170

NCE3N170 N-Channel Enhancement Mode Power MOSFET General Description The series of Power MOSFETs use advanced V 1850 V DS min@Tjmax technology and design.This high voltage MOSFET fits R 6 DS(ON)TYP Switched applications. ID 2.9 A Qg 33 nC Features High speed switching Intrinsic capacitances and Qg minimized 100% Avalanche Tested Application Switched applications ... See More ⇒

 0.1. Size:625K  ncepower
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NCE3N170

NCE3N170F N-Channel Enhancement Mode Power MOSFET General Description The series of Power MOSFETs use advanced V 1850 V DS min@Tjmax technology and design.This high voltage MOSFET fits R 6 DS(ON)TYP Switched applications. ID 2.9 A Qg 33 nC Features High speed switching Intrinsic capacitances and Qg minimized 100% Avalanche Tested Application Switched applications... See More ⇒

 0.2. Size:635K  ncepower
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NCE3N170

NCE3N170D N-Channel Enhancement Mode Power MOSFET General Description The series of Power MOSFETs use advanced V 1850 V DS min@Tjmax technology and design.This high voltage MOSFET fits R 6 DS(ON)TYP Switched applications. ID 2.9 A Qg 33 nC Features High speed switching Intrinsic capacitances and Qg minimized 100% Avalanche Tested Application Switched applications... See More ⇒

 0.3. Size:643K  ncepower
nce3n170t.pdf pdf_icon

NCE3N170

NCE3N170T N-Channel Enhancement Mode Power MOSFET General Description The series of Power MOSFETs use advanced V 1850 V DS min@Tjmax technology and design.This high voltage MOSFET fits R 6 DS(ON)TYP Switched applications. ID 2.9 A Qg 33 nC Features High speed switching Intrinsic capacitances and Qg minimized 100% Avalanche Tested Application Switched applications... See More ⇒

Detailed specifications: NCE3415Y , NCE3417 , NCE3420X , NCE3N150 , NCE3N150D , NCE3N150F , NCE3N150PF , NCE3N150T , 8N60 , NCE3N170D , NCE3N170F , NCE3N170PF , NCE3N170T , NCE4003 , NCE4005 , NCE4015S , NCE4090G .

Keywords - NCE3N170 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 
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