NCE40H11K Todos los transistores

 

NCE40H11K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE40H11K
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 105 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 110 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 17 nS
   Cossⓘ - Capacitancia de salida: 382 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0065 Ohm
   Paquete / Cubierta: TO-252
 

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NCE40H11K Datasheet (PDF)

 ..1. Size:753K  ncepower
 nce40h11k.pdf pdf_icon

NCE40H11K

Pb Free ProductNCE40H11Khttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE40H11K uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =40V,I =110ADS DSchematic diagramR

 6.1. Size:721K  ncepower
 nce40h11.pdf pdf_icon

NCE40H11K

Pb Free ProductNCE40H11http://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE40H11 uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =40V,I =110A Schematic diagramDS DR

 7.1. Size:669K  ncepower
 nce40h10k.pdf pdf_icon

NCE40H11K

NCE40H10Khttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE40H10K uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =40V,I =100ADS DSchematic diagramR

 7.2. Size:401K  ncepower
 nce40h12.pdf pdf_icon

NCE40H11K

Pb Free ProductNCE40H12http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A RDS(ON)

MOSTRAR MÁS

Otros transistores... NCE3N170T , NCE4003 , NCE4005 , NCE4015S , NCE4090G , NCE4090K , NCE40H10K , NCE40H11 , AON7403 , NCE40H12A , NCE40H25LL , NCE40H30D , NCE40H32LL , NCE40NP2815G , NCE40P06J , NCE40P06S , NCE40P15Q .

History: SML4065AN | SFF80N20NDB | NCE60P12K | SWD350R06VT | SML4080GN | AP6P090M | MMN8218

 

 
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