All MOSFET. NCE40H11K Datasheet

 

NCE40H11K MOSFET. Datasheet pdf. Equivalent


   Type Designator: NCE40H11K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 105 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 110 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 382 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: TO-252

 NCE40H11K Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCE40H11K Datasheet (PDF)

 ..1. Size:753K  ncepower
 nce40h11k.pdf

NCE40H11K NCE40H11K

Pb Free ProductNCE40H11Khttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE40H11K uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =40V,I =110ADS DSchematic diagramR

 6.1. Size:721K  ncepower
 nce40h11.pdf

NCE40H11K NCE40H11K

Pb Free ProductNCE40H11http://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE40H11 uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =40V,I =110A Schematic diagramDS DR

 7.1. Size:669K  ncepower
 nce40h10k.pdf

NCE40H11K NCE40H11K

NCE40H10Khttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE40H10K uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =40V,I =100ADS DSchematic diagramR

 7.2. Size:401K  ncepower
 nce40h12.pdf

NCE40H11K NCE40H11K

Pb Free ProductNCE40H12http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A RDS(ON)

 7.3. Size:458K  ncepower
 nce40h12k.pdf

NCE40H11K NCE40H11K

Pb Free ProductNCE40H12Khttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H12K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A RDS(ON)

 7.4. Size:392K  ncepower
 nce40h12i.pdf

NCE40H11K NCE40H11K

Pb Free ProductNCE40H12Ihttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H12I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A RDS(ON)

 7.5. Size:772K  ncepower
 nce40h14.pdf

NCE40H11K NCE40H11K

NCE40H14http://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE40H14 uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =40V,I =140ADS DR

 7.6. Size:664K  ncepower
 nce40h12a.pdf

NCE40H11K NCE40H11K

NCE40H12Ahttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE40H12A uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =40V,I =120ADS DR

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IRCP340

 

 
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