NCE40H30D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE40H30D
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 350 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 300 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 41 nS
Cossⓘ - Capacitancia de salida: 1360 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0018 Ohm
Encapsulados: TO-263
Búsqueda de reemplazo de NCE40H30D MOSFET
- Selecciónⓘ de transistores por parámetros
NCE40H30D datasheet
..1. Size:401K ncepower
nce40h30d.pdf 
http //www.ncepower.com NCE40H30D NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H30D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V ,ID =300A RDS(ON)
7.1. Size:383K ncepower
nce40h32ll.pdf
http //www.ncepower.com NCE40H32LL NCE N-Channel Enhancement Mode Power MOSFET Description General Features The NCE40H32LL uses advanced trench technology and VDS =40V ,ID =320A design to provide excellent RDS(ON) with low gate charge. It RDS(ON)
8.1. Size:339K ncepower
nce40h25ll.pdf
http //www.ncepower.com NCE40H25LL NCE N-Channel Enhancement Mode Power MOSFET General Features Description VDS =40V ,ID =250A The NCE40H25LL uses advanced trench technology and RDS(ON)
8.2. Size:669K ncepower
nce40h10k.pdf
NCE40H10K http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H10K uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =40V,I =100A DS D Schematic diagram R
8.3. Size:753K ncepower
nce40h11k.pdf
Pb Free Product NCE40H11K http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H11K uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =40V,I =110A DS D Schematic diagram R
8.4. Size:401K ncepower
nce40h12.pdf
Pb Free Product NCE40H12 http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A RDS(ON)
8.5. Size:398K ncepower
nce40h29d.pdf
Pb Free Product http //www.ncepower.com NCE40H29D NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H29D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V ,ID =290A RDS(ON)
8.6. Size:361K ncepower
nce40h21.pdf
Pb Free Product http //www.ncepower.com NCE40H21 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H21 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V ,ID =210A Schematic diagram RDS(ON)
8.8. Size:392K ncepower
nce40h12i.pdf
Pb Free Product NCE40H12I http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H12I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A RDS(ON)
8.9. Size:336K ncepower
nce40h20a.pdf
Pb Free Product http //www.ncepower.com NCE40H20A NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H20A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 40V,ID =200A RDS(ON)
8.10. Size:772K ncepower
nce40h14.pdf
NCE40H14 http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H14 uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =40V,I =140A DS D R
8.11. Size:721K ncepower
nce40h11.pdf
Pb Free Product NCE40H11 http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H11 uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =40V,I =110A Schematic diagram DS D R
8.12. Size:664K ncepower
nce40h12a.pdf
NCE40H12A http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H12A uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =40V,I =120A DS D R
Otros transistores... NCE4015S, NCE4090G, NCE4090K, NCE40H10K, NCE40H11, NCE40H11K, NCE40H12A, NCE40H25LL, K2611, NCE40H32LL, NCE40NP2815G, NCE40P06J, NCE40P06S, NCE40P15Q, NCE40P20Q, NCE40P20Q1, NCE40P25G
