NCE40H30D Datasheet. Specs and Replacement

Type Designator: NCE40H30D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 350 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 300 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 41 nS

Cossⓘ - Output Capacitance: 1360 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0018 Ohm

Package: TO-263

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NCE40H30D datasheet

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NCE40H30D

http //www.ncepower.com NCE40H30D NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H30D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V ,ID =300A RDS(ON) ... See More ⇒

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nce40h32ll.pdf pdf_icon

NCE40H30D

http //www.ncepower.com NCE40H32LL NCE N-Channel Enhancement Mode Power MOSFET Description General Features The NCE40H32LL uses advanced trench technology and VDS =40V ,ID =320A design to provide excellent RDS(ON) with low gate charge. It RDS(ON) ... See More ⇒

 8.1. Size:339K  ncepower
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NCE40H30D

http //www.ncepower.com NCE40H25LL NCE N-Channel Enhancement Mode Power MOSFET General Features Description VDS =40V ,ID =250A The NCE40H25LL uses advanced trench technology and RDS(ON) ... See More ⇒

 8.2. Size:669K  ncepower
nce40h10k.pdf pdf_icon

NCE40H30D

NCE40H10K http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H10K uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =40V,I =100A DS D Schematic diagram R ... See More ⇒

Detailed specifications: NCE4015S, NCE4090G, NCE4090K, NCE40H10K, NCE40H11, NCE40H11K, NCE40H12A, NCE40H25LL, SI2302, NCE40H32LL, NCE40NP2815G, NCE40P06J, NCE40P06S, NCE40P15Q, NCE40P20Q, NCE40P20Q1, NCE40P25G

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