FQA32N20C Todos los transistores

 

FQA32N20C MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQA32N20C

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 204 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 32 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.082 Ohm

Encapsulados: TO3PN

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FQA32N20C datasheet

 ..1. Size:625K  fairchild semi
 fqa32n20c.pdf pdf_icon

FQA32N20C

QFET FQA32N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 32A, 200V, RDS(on) = 0.082 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 82.5 nC) planar, DMOS technology. Low Crss ( typical 185 pF) This advanced technology has been especially tailored to Fast s

 ..2. Size:2899K  onsemi
 fqa32n20c.pdf pdf_icon

FQA32N20C

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Otros transistores... FQA19N60 , SDF07N50T , FQA24N60 , SDF07N50 , FQA27N25 , FQA28N15 , FQA30N40 , SDF06N60 , IRF1407 , SDF05N50 , FQA36P15 , FQA40N25 , FQA44N30 , FQA46N15 , FQA55N25 , FQA62N25C , FQA65N20 .

 

 

 

 

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