FQA32N20C Specs and Replacement
Type Designator: FQA32N20C
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 204 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 32 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.082 Ohm
Package: TO3PN
FQA32N20C substitution
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FQA32N20C datasheet
fqa32n20c.pdf
QFET FQA32N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 32A, 200V, RDS(on) = 0.082 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 82.5 nC) planar, DMOS technology. Low Crss ( typical 185 pF) This advanced technology has been especially tailored to Fast s... See More ⇒
fqa32n20c.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
Detailed specifications: FQA19N60, SDF07N50T, FQA24N60, SDF07N50, FQA27N25, FQA28N15, FQA30N40, SDF06N60, IRF1407, SDF05N50, FQA36P15, FQA40N25, FQA44N30, FQA46N15, FQA55N25, FQA62N25C, FQA65N20
Keywords - FQA32N20C MOSFET specs
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