FQA32N20C MOSFET. Datasheet pdf. Equivalent
Type Designator: FQA32N20C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 204 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 32 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 82.5 nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.082 Ohm
Package: TO3PN
FQA32N20C Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQA32N20C Datasheet (PDF)
fqa32n20c.pdf
QFETFQA32N20C200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 32A, 200V, RDS(on) = 0.082 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 82.5 nC)planar, DMOS technology. Low Crss ( typical 185 pF)This advanced technology has been especially tailored to Fast s
fqa32n20c.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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