FQA32N20C PDF and Equivalents Search

 

FQA32N20C Specs and Replacement

Type Designator: FQA32N20C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 204 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 32 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.082 Ohm

Package: TO3PN

FQA32N20C substitution

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FQA32N20C datasheet

 ..1. Size:625K  fairchild semi
fqa32n20c.pdf pdf_icon

FQA32N20C

QFET FQA32N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 32A, 200V, RDS(on) = 0.082 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 82.5 nC) planar, DMOS technology. Low Crss ( typical 185 pF) This advanced technology has been especially tailored to Fast s... See More ⇒

 ..2. Size:2899K  onsemi
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FQA32N20C

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

Detailed specifications: FQA19N60, SDF07N50T, FQA24N60, SDF07N50, FQA27N25, FQA28N15, FQA30N40, SDF06N60, IRF1407, SDF05N50, FQA36P15, FQA40N25, FQA44N30, FQA46N15, FQA55N25, FQA62N25C, FQA65N20

Keywords - FQA32N20C MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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