NCE50NF180 Todos los transistores

 

NCE50NF180 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE50NF180
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 129 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 17 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 52 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm
   Paquete / Cubierta: TO-220
 

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NCE50NF180 Datasheet (PDF)

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NCE50NF180

NCE50NF180N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 150 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 17 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22 nCpower conversion, and indust

 0.1. Size:797K  ncepower
 nce50nf180i.pdf pdf_icon

NCE50NF180

NCE50NF180IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 150 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 17 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22 nCpower conversion, and indus

 0.2. Size:804K  ncepower
 nce50nf180k.pdf pdf_icon

NCE50NF180

NCE50NF180KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 150 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 17 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22 nCpower conversion, and indus

 0.3. Size:801K  ncepower
 nce50nf180d.pdf pdf_icon

NCE50NF180

NCE50NF180DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 150 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 17 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22 nCpower conversion, and indus

MOSTRAR MÁS

Otros transistores... NCE50N2K2R , NCE50N540K , NCE50NF130D , NCE50NF130F , NCE50NF130K , NCE50NF130LL , NCE50NF130T , NCE50NF130V , 8205A , NCE50NF180D , NCE50NF180F , NCE50NF180I , NCE50NF180K , NCE50NF220 , NCE50NF220F , NCE50NF220I , NCE50NF220K .

History: IXFT58N20 | PMT29EN | IPL65R165CFD | APT1004RGN | IXFT60N20 | IXTA1R4N100P | IXTH30N25

 

 
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