NCE50NF180 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE50NF180

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 129 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 17 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 52 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm

Encapsulados: TO-220

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NCE50NF180 datasheet

 ..1. Size:812K  ncepower
 nce50nf180.pdf pdf_icon

NCE50NF180

NCE50NF180 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 150 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 17 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 22 nC power conversion, and indust

 0.1. Size:797K  ncepower
 nce50nf180i.pdf pdf_icon

NCE50NF180

NCE50NF180I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 150 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 17 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 22 nC power conversion, and indus

 0.2. Size:804K  ncepower
 nce50nf180k.pdf pdf_icon

NCE50NF180

NCE50NF180K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 150 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 17 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 22 nC power conversion, and indus

 0.3. Size:801K  ncepower
 nce50nf180d.pdf pdf_icon

NCE50NF180

NCE50NF180D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 150 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 17 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 22 nC power conversion, and indus

MOSTRAR MÁS

Otros transistores... NCE50N2K2R, NCE50N540K, NCE50NF130D, NCE50NF130F, NCE50NF130K, NCE50NF130LL, NCE50NF130T, NCE50NF130V, 2SK3878, NCE50NF180D, NCE50NF180F, NCE50NF180I, NCE50NF180K, NCE50NF220, NCE50NF220F, NCE50NF220I, NCE50NF220K