All MOSFET. NCE50NF180 Datasheet

 

NCE50NF180 Datasheet and Replacement


   Type Designator: NCE50NF180
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 129 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 17 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 52 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO-220
 

 NCE50NF180 substitution

   - MOSFET ⓘ Cross-Reference Search

 

NCE50NF180 Datasheet (PDF)

 ..1. Size:812K  ncepower
 nce50nf180.pdf pdf_icon

NCE50NF180

NCE50NF180N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 150 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 17 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22 nCpower conversion, and indust

 0.1. Size:797K  ncepower
 nce50nf180i.pdf pdf_icon

NCE50NF180

NCE50NF180IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 150 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 17 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22 nCpower conversion, and indus

 0.2. Size:804K  ncepower
 nce50nf180k.pdf pdf_icon

NCE50NF180

NCE50NF180KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 150 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 17 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22 nCpower conversion, and indus

 0.3. Size:801K  ncepower
 nce50nf180d.pdf pdf_icon

NCE50NF180

NCE50NF180DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 150 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 17 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22 nCpower conversion, and indus

SHOW MORE

Datasheet: NCE50N2K2R , NCE50N540K , NCE50NF130D , NCE50NF130F , NCE50NF130K , NCE50NF130LL , NCE50NF130T , NCE50NF130V , IRFP260 , NCE50NF180D , NCE50NF180F , NCE50NF180I , NCE50NF180K , NCE50NF220 , NCE50NF220F , NCE50NF220I , NCE50NF220K .

History: NVD5805N

Keywords - NCE50NF180 MOSFET datasheet

 NCE50NF180 cross reference
 NCE50NF180 equivalent finder
 NCE50NF180 lookup
 NCE50NF180 substitution
 NCE50NF180 replacement

 

 
Back to Top

 


 
.