Справочник MOSFET. NCE50NF180

 

NCE50NF180 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE50NF180
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 129 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 17 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 10 ns
   Cossⓘ - Выходная емкость: 52 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.18 Ohm
   Тип корпуса: TO-220
     - подбор MOSFET транзистора по параметрам

 

NCE50NF180 Datasheet (PDF)

 ..1. Size:812K  ncepower
 nce50nf180.pdf pdf_icon

NCE50NF180

NCE50NF180N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 150 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 17 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22 nCpower conversion, and indust

 0.1. Size:797K  ncepower
 nce50nf180i.pdf pdf_icon

NCE50NF180

NCE50NF180IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 150 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 17 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22 nCpower conversion, and indus

 0.2. Size:804K  ncepower
 nce50nf180k.pdf pdf_icon

NCE50NF180

NCE50NF180KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 150 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 17 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22 nCpower conversion, and indus

 0.3. Size:801K  ncepower
 nce50nf180d.pdf pdf_icon

NCE50NF180

NCE50NF180DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 150 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 17 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22 nCpower conversion, and indus

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History: 2N7121 | AO8803 | FDC3612

 

 
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