NCE6080AT Todos los transistores

 

NCE6080AT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE6080AT
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 110 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.8 V
   Qgⓘ - Carga de la puerta: 90.3 nC
   trⓘ - Tiempo de subida: 7 nS
   Cossⓘ - Capacitancia de salida: 290 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0078 Ohm
   Paquete / Cubierta: TO-247
 

 Búsqueda de reemplazo de NCE6080AT MOSFET

   - Selección ⓘ de transistores por parámetros

 

NCE6080AT Datasheet (PDF)

 ..1. Size:801K  ncepower
 nce6080at.pdf pdf_icon

NCE6080AT

Pb Free ProductNCE6080AThttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE6080AT uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =80ADS DR =5.5m (typical) @ V =10VDS(ON) GSR =6.5m (typical) @ V =4.5VDS(ON) G

 6.1. Size:600K  ncepower
 nce6080ak.pdf pdf_icon

NCE6080AT

Pb Free ProductNCE6080AKhttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE6080AK uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =80ADS DR =6m (typical) @ V =10V Schematic diagramDS(ON) GSR =7m (typical) @ V =

 6.2. Size:393K  ncepower
 nce6080a.pdf pdf_icon

NCE6080AT

Pb Free ProductNCE6080Ahttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =80A RDS(ON)=6.5m (typical) @ VGS=10V Schematic diagram RDS(ON)=7.5m (typica

 6.3. Size:757K  ncepower
 nce6080ai.pdf pdf_icon

NCE6080AT

http://www.ncepower.com NCE6080AINCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE6080AI uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =80ADS DR =5.5m (typical) @ V =10V Schematic diagramDS(ON) GSR =6.5m (typical) @ V =4.5VDS(ON) G

MOSTRAR MÁS

Otros transistores... NCE6058 , NCE6058AK , NCE6058K , NCE6065AG , NCE6065G , NCE6080 , NCE6080AI , NCE6080AK , NCEP15T14 , NCE6080ED , NCE6080EK , NCE60H10 , NCE60H10D , NCE60H10K , NCE60H15AT , NCE60H15T , NCE60H18 .

History: AOD2904 | NDB610BE

 

 
Back to Top

 


 
.