Справочник MOSFET. NCE6080AT

 

NCE6080AT MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NCE6080AT
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 110 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1.8 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 80 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 90.3 nC
   trⓘ - Время нарастания: 7 ns
   Cossⓘ - Выходная емкость: 290 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0078 Ohm
   Тип корпуса: TO-247

 Аналог (замена) для NCE6080AT

 

 

NCE6080AT Datasheet (PDF)

 ..1. Size:801K  ncepower
 nce6080at.pdf

NCE6080AT NCE6080AT

Pb Free ProductNCE6080AThttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE6080AT uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =80ADS DR =5.5m (typical) @ V =10VDS(ON) GSR =6.5m (typical) @ V =4.5VDS(ON) G

 6.1. Size:600K  ncepower
 nce6080ak.pdf

NCE6080AT NCE6080AT

Pb Free ProductNCE6080AKhttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE6080AK uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =80ADS DR =6m (typical) @ V =10V Schematic diagramDS(ON) GSR =7m (typical) @ V =

 6.2. Size:393K  ncepower
 nce6080a.pdf

NCE6080AT NCE6080AT

Pb Free ProductNCE6080Ahttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =80A RDS(ON)=6.5m (typical) @ VGS=10V Schematic diagram RDS(ON)=7.5m (typica

 6.3. Size:757K  ncepower
 nce6080ai.pdf

NCE6080AT NCE6080AT

http://www.ncepower.com NCE6080AINCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE6080AI uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =80ADS DR =5.5m (typical) @ V =10V Schematic diagramDS(ON) GSR =6.5m (typical) @ V =4.5VDS(ON) G

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