NCE6080AT Specs and Replacement

Type Designator: NCE6080AT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 110 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 290 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0078 Ohm

Package: TO-247

NCE6080AT substitution

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NCE6080AT datasheet

 ..1. Size:801K  ncepower
 nce6080at.pdf pdf_icon

NCE6080AT

Pb Free Product NCE6080AT http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080AT uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =60V,I =80A DS D R =5.5m (typical) @ V =10V DS(ON) GS R =6.5m (typical) @ V =4.5V DS(ON) G... See More ⇒

 6.1. Size:600K  ncepower
 nce6080ak.pdf pdf_icon

NCE6080AT

Pb Free Product NCE6080AK http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080AK uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =60V,I =80A DS D R =6m (typical) @ V =10V Schematic diagram DS(ON) GS R =7m (typical) @ V =... See More ⇒

 6.2. Size:393K  ncepower
 nce6080a.pdf pdf_icon

NCE6080AT

Pb Free Product NCE6080A http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =80A RDS(ON)=6.5m (typical) @ VGS=10V Schematic diagram RDS(ON)=7.5m (typica... See More ⇒

 6.3. Size:757K  ncepower
 nce6080ai.pdf pdf_icon

NCE6080AT

http //www.ncepower.com NCE6080AI NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080AI uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =60V,I =80A DS D R =5.5m (typical) @ V =10V Schematic diagram DS(ON) GS R =6.5m (typical) @ V =4.5V DS(ON) G... See More ⇒

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Detailed specifications: NCE6058, NCE6058AK, NCE6058K, NCE6065AG, NCE6065G, NCE6080, NCE6080AI, NCE6080AK, IRF1405, NCE6080ED, NCE6080EK, NCE60H10, NCE60H10D, NCE60H10K, NCE60H15AT, NCE60H15T, NCE60H18

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs